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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS



Motorola Semiconductors 로고
Motorola Semiconductors
BDW47 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDW42/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) — BDW46
VCEO(sus) = 100 Vdc (min.) — BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with Built–In Base Emitter Shunt resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BDW42
BDW46 BDW47
80 100
80 100
5.0
15
0.5
85
0.68
– 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_ C
_C
Symbol
RθJC
Max
1.47
Unit
_ C/W
NPN
BDW42
PNP
BDW46
BDW47
*
*
*Motorola Preferred Device
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
85 WATTS
CASE 221A–06
TO–220AB
90
80
70
60
50
40
30
20
10
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©3M–2ot1o2rola, Inc. 1995
Motorola Bipolar Power Transistor Device Data


BDW47 데이터시트, 핀배열, 회로
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC=25_Cunlessotherwisenoted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 mAdc, IB = 0)
BDW46
BDW42/BDW47
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 100 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 4.0 Vdc)
BDW46
BDW42/BDW47
BDW41/BDW46
BDW42/BDW47
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector
Current with Base Forward Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDW42
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDW46/BDW47
VCE = 28.4 Vdc
VCE = 40 Vdc
VCE = 22.5 Vdc
VCE = 36 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of common emitter small signal short circuit current transfer ratio
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
BDW42
BDW46/BDW47
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
BDW42 BDW46 BDW47
Symbol
Min
VCEO(sus)
ICEO
ICBO
IEBO
80
100
Max Unit
Vdc
mAdc
2.0
2.0
mAdc
1.0
1.0
2.0 mAdc
hFE
1000
250 —
VCE(sat)
Vdc
2.0
3.0
VBE(on)
3.0 Vdc
IS/b Adc
3.0 —
1.2 —
3.8 —
1.2 —
fT 4.0 — MHz
Cob pF
— 200
— 300
hfe 300 —
(2) Pulse Test non repetitive: Pulse Width = 250 ms.
5.0
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
– 30 V
3.0 ts
D1 MUST BE FAST RECOVERY TYPES, e.g.:
[1N5825 USED ABOVE IB 100 mA
[MSD6100 USED BELOW IB 100 mA
RC
SCOPE
2.0
1.0
tf
TUT 0.7
V2 RB
0.5
APPROX
+ 8.0 V
0
51 D1
[ 8.0 k [ 150
0.3
0.2 VCC = 30 V
tr
V1
APPROX
– 12 V
25 µs
+ 4.0 V
for td and tr, D1 id disconnected
IC/IB = 250
0.1 IB1 = IB2
0.07 TJ = 25°C
td @ VBE(off) = 0 V
vtr, tf 10 ns
DUTY CYCLE = 1.0%
and V2 = 0
For NPN test circuit reverse all polarities
0.05
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
Motorola Bipolar Power Transistor Device Data
3–213




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BDW47 transistor

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