|
ST Microelectronics |
www.DataSheet4U.com
® STX817
PNP MEDIUM POWER TRANSISTOR
Type
STX817
Marking
X817
s DEVICE SUITABLE FOR THROUGH-HOLE
PCB ASSEMBLY
APPLICATIONS
s VOLTAGE REGULATION
s RELAY DRIVER
s GENERIC SWITCH
DECRIPTION
The STX817 is a PNP transistor manufactured
using Planar Technology resulting in rugged high
performance devices.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current (tp < 5 ms)
IB Base Current
IBM Base Peak Current (tp < 5 ms)
Ptot Total Dissipation at Tamb = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
April 2002
Value
-120
-80
-5
-1.5
-2
-0.3
-0.6
0.9
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
1/4
STX817
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
44.6
139
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = -120 V
VCE = -80 V
VEB = -5 V
IC = -10 mA
IC = -100 mA
IC = -1 A
IB = -10 mA
IB = -100 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -100 mA
IC = -1 A
IB = -10 mA
IB = -100 mA
hFE∗ DC Current Gain
IC = -100 mA
IC = -500 mA
IC = -1 A
VCE = -2 V
VCE = -2 V
VCE = -2 V
fT Transition Frequency IC = -0.1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = -10 V
Min. Typ.
-80
140
80
40
50
Max.
-500
-1
-100
-0.25
-0.5
-1
-1.1
Unit
µA
mA
µA
V
V
V
V
V
MHz
2/4
|