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ST Microelectronics |
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® BCP52-16
LOW POWER PNP TRANSISTOR
Ordering Code
BCP52-16
Marking
BCP5216
s SILICON EPITAXIAL PLANAR PNP MEDIUM
VOLTAGE TRANSISTOR
s SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
s TAPE AND REEL PACKING
s THE NPN COMPLEMENTARY TYPE IS
BCP55-16
APPLICATIONS
s MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
s OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
s AUTOMOTIVE POST-VOLTAGE
REGULATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 1KΩ)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tamb = 25 oC
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
-60
-60
-60
-5
-1
-1.5
-0.1
-0.2
1.4
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
oC
oC
1/4
BCP52-16
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2
Max
89.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
Tj = 125 oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CER
Collector-Emitter
Breakdown Voltage
(RBE = 1 KΩ)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -100 µA
IC = -20 mA
IC = -100 µA
IE = -10 µA
IC = -500 mA IB = -50 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = -500 mA VCE = -2 V
hFE∗ DC Current Gain
IC = -5 mA
IC = -150 mA
IC = -500 mA
VCE = -2 V
VCE = -2 V
VCE = -2 V
fT Transition Frequency IC = -10 mA VCE = -5 V f = 20 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-60
-60
-60
-5
40
100
25
Typ.
50
Max.
-100
-10
-0.5
-1
250
Unit
nA
µA
V
V
V
V
V
V
MHz
2/4
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