NZT902 반도체 회로 부품 판매점

NPN Low Saturation Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
NZT902 데이터시트, 핀배열, 회로
www.DataSheet4U.com
September 2006
NZT902
NPN Low Saturation Transistor
• These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
tm
4
3
2
1 SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
90
VCBO
Collector-Base Voltage
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current
- Continuous
3
TJ Junction Temperature
150
TSTG
Storage Temperature Range
- 55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
°C
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Value
1
125
Electrical Characteristics* Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BVCEO
Collector-Emitter Breakdown Voltage IC = 10mA
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
ICBO
Collector-Base Cutoff Current
VCB = 100V
VCB = 100V, Ta = 100 °C
IEBO
Emitter-Base Cutoff Current
VEB = 4V
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 0.1A, IB = 5.0mA
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
IC = 1A, IB = 100mA
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
fT Transition Frequency
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
IC = 100mA, VCE = 5V, f = 100MHz
Min.
90
120
5
80
80
25
75
Typ.
Units
W
°C/W
Max. Units
V
V
V
100 nA
10 uA
100 nA
50 mV
250 mV
600 mV
1.25 V
35 pF
MHz
©2006 Fairchild Semiconductor Corporation
NZT902 Rev. B
1
www.fairchildsemi.com

NZT902 데이터시트, 핀배열, 회로
Typical Performance Characteristics
Figure 1. Static Characteristic
0.40
1.6mA
0.35
1.4mA
0.30
1.2mA
0.25
1.0mA
0.20 0.8mA
0.15 0.6mA
0.10 0.4mA
0.05 Ib=0.2mA
0.00
0.0
0.5 1.0 1.5
Collector-Emitter Voltage, Vce[V]
2.0
Figure 2. DC current Gain
350
150oC
Vce=2V
300 75oC
250 25oC
200 -25oC
150
-50oC
100
50
0
1E-3
0.01 0.1
Collector Current, [A]
1
Figure 3. Collector-Emitter Saturation Voltage
0.5
B=10
0.4
150oC
75oC
0.3
25oC
0.2
-25oC
0.1 -50oC
Figure 4. Base-Emitter Saturation Voltage
1.2
B=10
1.0
0.8
-50oC
-25oC
0.6
25oC
75oC
0.4 150oC
0.0
0.1
1
Collector Current, [A]
0.2
0.01
0.1
Collector Current, [A]
1
Figure 5. Output Capacitance
80
70
f=1mhz
60
50
40
30
20
10
0 20 40 60 80 100
Reverse Voltage, V [V]
R
Figure 6. Power Dissipation vs
Ambient Temperature
1.5
1.0
0.5
0.0
0
25 50 75 100 125
Case Temperature, T [oC]
C
150
NZT902 Rev. B
2 www.fairchildsemi.com




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NZT902 transistor

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NZT902

NPN Low Saturation Transistor - Fairchild Semiconductor