파트넘버.co.kr B772SS 데이터시트 PDF


B772SS 반도체 회로 부품 판매점

MEDIUM POWER LOW VOLTAGE TRANSISTOR



Unisonic Technologies 로고
Unisonic Technologies
B772SS 데이터시트, 핀배열, 회로
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
B772SS
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC B772SS is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to D882SS
3
1
2
SOT-23
*Pb-free plating product number: B772SSL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
B772SS-x-AE3-R
B772SSL-x-AE3-R
Package
SOT-23
Pin Assignment
123
EBC
Packing
Tape Reel
B 772SSL-x-AE3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) x: refer to Classification of hFE2
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
B72
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-089,B


B772SS 데이터시트, 핀배열, 회로
B772SS
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO -40 V
Collector-Emitter Voltage
VCEO -30 V
Emitter-Base Voltage
VEBO -5 V
Collector Current
Pulse
DC
ICP
IC
-7 A
-3 A
Base Current
Collector Dissipation
Tc=25
Ta=25
IB
PD
-0.6 A
10 W
350 mW
Junction Temperature
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100µA, IC=0
Collector Cut-Off Current
ICBO VCB=-30V ,IE=0
Collector Cut-Off Current
ICEO VCE=-30V ,IB=0
Emitter Cut-Off Current
IEBO VEB=-3V, IC=0
DC Current Gain(Note 1)
hFE1
hFE2
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A
Base-Emitter Saturation Voltage
VBE(SAT) IC=-2A, IB=-0.2A
Current Gain Bandwidth Product
fT VCE=-5V, IC=-0.1A
Output Capacitance
Cob VCB=-10V, IE=0,f=1MHz
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100 ~ 200
P
160 ~ 320
MIN TYP MAX UNIT
-40 V
-30 V
-5 V
-1000 nA
-1000 nA
-1000 nA
30 200
100 150 400
-0.3 -0.5 V
-1.0 -2.0 V
80 MHz
45 pF
E
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-089.B




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Unisonic Technologies

( utc )

B772SS transistor

데이터시트 다운로드
:

[ B772SS.PDF ]

[ B772SS 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


B772S

PNP Plastic Encapsulated Transistor - SeCoS



B772SS

MEDIUM POWER LOW VOLTAGE TRANSISTOR - Unisonic Technologies