DataSheet.es    


PDF BLC6G10LS-200 Data sheet ( Hoja de datos )

Número de pieza BLC6G10LS-200
Descripción UHF power LDMOS transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BLC6G10LS-200 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! BLC6G10LS-200 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 27
ACPR
(dBc)
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = 39 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.

1 page




BLC6G10LS-200 pdf
www.DataSheet4U.com
Philips Semiconductors
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896-1
D
F
A
3
D1 D
L
H U2
U1
1
c
E1 E
2
b w2 M D M
Q
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
c
D D1 E E1 F H L Q U1 U2 w2
mm
4.1 12.83 0.17
3.3 12.57 0.14
19.9 20.42 9.53 9.78 1.14 19.94 5.3
19.7 20.12 9.27 9.53 0.89 18.92 4.5
1.75 20.70 9.98
1.50 20.45 9.65
0.6
inches
0.161
0.130
0.505
0.495
0.0065
0.0055
0.785 0.804
0.775 0.792
0.375
0.365
0.385
0.375
0.045
0.035
0.785
0.745
0.209
0.177
0.069
0.059
0.815
0.805
0.392
0.380
0.023
OUTLINE
VERSION
SOT896-1
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-28
06-02-21
Fig 2. Package outline SOT896-1
BLC6G10-200_6G10LS-200_1
Objective data sheet
Rev. 01 — 19 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 9

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet BLC6G10LS-200.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BLC6G10LS-200UHF power LDMOS transistorNXP Semiconductors
NXP Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar