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BFG325XR 반도체 회로 부품 판매점

NPN 14 GHz wideband transistor



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NXP Semiconductors
BFG325XR 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BFG325/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features
s High power gain
s Low noise figure
s High transition frequency
s Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVision (SATV) tuners
x repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCBO collector-base voltage
VCEO collector-emitter voltage
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Gmax maximum power gain [2]
Conditions
open emitter
open base
Tsp 90 °C
IC = 15 mA; VCE = 3 V;
Tj = 25 °C
VCB = 5 V; f = 1 MHz;
emitter grounded
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 °C
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C
Min
-
-
-
[1] -
60
-
-
-
Typ Max Unit
- 15 V
- 6V
- 35 mA
- 210 mW
100 200
0.26 0.4 pF
14 -
GHz
18.3 -
dB


BFG325XR 데이터시트, 핀배열, 회로
Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
Table 1: Quick reference data …continued
Symbol Parameter
Conditions
|s21|2 insertion power gain
NF noise figure
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C;
ZS = ZL = 50
Γs = Γopt; IC = 3 mA;
VCE = 3 V; f = 2 GHz
Min Typ
- 14
- 1.1
[1] Tsp is the temperature at the soldering point of the collector pin.
[2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
Max Unit
- dB
- dB
2. Pinning information
Table 2:
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
Simplified outline Symbol
34
1
21
3
2, 4
sym086
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BFG325/XR
SC-61AA plastic surface mounted package; reverse pinning;
4 leads
Version
SOT143R
4. Marking
Table 4: Marking codes
Type number
BFG325/XR
[1] * = p: made in Hong Kong.
5. Limiting values
Marking code [1]
S2*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCBO
VCEO
VEBO
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
open base
open collector
Min Max Unit
- 15 V
- 6V
- 2V
9397 750 14247
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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BFG325XR

NPN 14 GHz wideband transistor - NXP Semiconductors



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NPN 14 GHz wideband transistor - NXP Semiconductors