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PDF BFG325 Data sheet ( Hoja de datos )
| Número de pieza | BFG325 | |
| Descripción | NPN 14 GHz wideband transistor | |
| Fabricantes | NXP Semiconductors | |
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BFG325/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features
s High power gain
s Low noise figure
s High transition frequency
s Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVision (SATV) tuners
x repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCBO collector-base voltage
VCEO collector-emitter voltage
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Gmax maximum power gain [2]
Conditions
open emitter
open base
Tsp ≤ 90 °C
IC = 15 mA; VCE = 3 V;
Tj = 25 °C
VCB = 5 V; f = 1 MHz;
emitter grounded
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 °C
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C
Min
-
-
-
[1] -
60
-
-
-
Typ Max Unit
- 15 V
- 6V
- 35 mA
- 210 mW
100 200
0.26 0.4 pF
14 -
GHz
18.3 -
dB
1 page  
Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
135° +0.5
90°
+1
+2 45°
1.0
0.8
0.6
+ 0.2
3 GHz
0
180°
0.2 0.5
1
0.4
+5
0.2
2
5 10
0° 0
40 MHz
− 0.2
−5
−135° −0.5
−1
− 90°
−2
− 45°
001aac151
VCE = 3 V; IC = 15 mA; Zo = 50 Ω.
Fig 5. Common emitter input reflection coefficient (s11); typical values
90°
1.0
135°
45°
40 MHz
180° 50 40 30 20 10
0 3 GHz
0°
− 135°
− 45°
− 90°
001aac152
VCE = 3 V; IC = 15 mA.
Fig 6. Common emitter forward transmission coefficient (s21); typical values
9397 750 14247
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
11. Data sheet status
Level Data sheet status [1] Product status [2] [3]
I Objective data
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14247
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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