AO3701 반도체 회로 부품 판매점
P-Channel Enhancement Mode Field Effect Transistor
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 Alpha & Omega Semiconductors |
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AO3701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3701 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications. It is
ESD protected. Standard Product AO3701 is Pb-free (meets
ROHS & Sony 259 specifications). AO3701L is a Green
Product ordering option. AO3701 and AO3701L are
electrically identical.
Features
VDS (V) = -20V
ID = -3A (VGS = -10V)
RDS(ON) < 80mΩ (VGS = -10V)
RDS(ON) < 100mΩ (VGS = -4.5V)
RDS(ON) < 145mΩ (VGS = -2.5V)
ESD Rating: 2000V HBM
SCHOTTKY
SOT-23-5
Top View
G 15
S2
A 34
D
K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-20
±12
-3
-2.3
-10
1.14
0.72
-55 to 150
Typ
80.3
117
43
109.4
136.5
58.5
Schottky
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO3701
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VDS=-16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, VGS=±12V
TJ=55°C
-0.5
-5 µΑ
±1 µA
±10 µA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.6 -0.9 -1.4
V
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-10
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
TJ=125°C
65
91
80
110
mΩ
82 100 mΩ
117 145 mΩ
gFS Forward Transconductance
VDS=-5V, ID=-3A
6.8 S
VSD Diode Forward Voltage
IS=-1A,VGS=0V
-0.65 -0.8 -0.95 V
IS Maximum Body-Diode Continuous Current
-2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
512 620
77
62
9.2 13
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-10V, RL=2.8Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
5.5
0.8
1.9
5
6.7
28
13.5
9.8
2.7
6.6
12
nC
nC
nC
ns
ns
ns
ns
ns
nC
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
IF=0.5A
0.39 0.45 V
Irm
Maximum reverse leakage current
VR=16V
VR=16V, TJ=125°C
0.1 mA
20
CT Junction Capacitance
VR=10V
34 pF
trr
Schottky Reverse Recovery Time
IF=1A, dI/dt=100A/µs
5.2 10 ns
Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs
0.8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO3701 transistor
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