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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 25m
P-Channel -30 35m
ID
7A
-6A
P3503QVG
SOP-8
Lead-Free
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -6
6 -5 A
20 -20
2
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
48
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.5 2.5
P-Ch -1 -1.5 -2.5
V
N-Ch
P-Ch
±100
nA
±100
1 OCT-08-2004
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P3503QVG
SOP-8
Lead-Free
VDS = 24V, VGS = 0V
N-Ch
1
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
P-Ch
IDSS VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
-1
10 µA
VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch
-10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
N-Ch 20
P-Ch -20
A
VGS = 4.5V, ID = 6A
N-Ch
25 37
Drain-Source
Resistance1
On-State
RDS(ON)
VGS = -4.5V, ID = -5A
VGS = 10V, ID = 7A
P-Ch
N-Ch
44 60
m
18 25
VGS = -10V, ID = -6A
P-Ch
28 35
Forward Transconductance1
VDS = 5V, ID = 7A
N-Ch
19
gfs S
VDS = -5V, ID = -5A
P-Ch
10
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
N-Ch
Ciss
N-Channel
P-Ch
VGS = 0V, VDS = 10V, f = 1MHz N-Ch
Coss
P-Channel
P-Ch
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
Crss
P-Ch
Qg
N-Channel
N-Ch
VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch
ID = 6A
N-Ch
Qgs
P-Channel
P-Ch
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch
Qgd
ID = -5A
P-Ch
N-Ch
td(on)
N-Channel
P-Ch
VDD = 10V
N-Ch
tr ID ≅ 1A, VGS = 10V, RGEN = 6 P-Ch
N-Ch
td(off)
P-Channel
P-Ch
VDD = -15V
N-Ch
tf ID ≅ -1A, VGS = -10V, RGEN = 6 P-Ch
790 988
970 1213
175 245
370 520 pF
65 98
180 270
16
28
2.5
6 nC
2.1
12
2.2 4.4
20
7.5 15
17
11.8 21.3 nS
160
3.7 7.4
75
2 OCT-08-2004
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