XN06211 반도체 회로 부품 판매점
Silicon NPN epitaxial planar transistor
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 Panasonic Semiconductor |
www.DataSheet4U.com
Composite Transistors
XN06211 (XN6211)
Silicon NPN epitaxial planar transistor
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2211 (UN2211) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 7Z
Internal Connection
45
6
Tr1
Tr2
■ Electrical Characteristics Ta = 25°C ± 3°C
321
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.5
Forward current transfer ratio
hFE Ratio *
hFE VCE = 10 V, IC = 5 mA
hFE(Small VCE = 10 V, IC = 5 mA
35
0.50 0.99
/Large)
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
Output voltage high-level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
Output voltage low-level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
Input resistance
R1
−30% 10 +30%
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
V
V
µA
µA
mA
V
V
V
kΩ
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2003
SJJ00100BED
1
XN06211
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
160
IB = 1.0 mA
0.9 mA
0.8 mA
Ta = 25°C
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80 0.3 mA
0.2 mA
40
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
25°C Ta = 75°C
0.1
−25˚C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
400
VCE = 10 V
300
Ta = 75°C
200
25°C
100 −25°C
0
1 10 100 1 000
Collector current IC (mA)
VIN IO
100 VO = 0.2 V
Ta = 25°C
10
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
IO VIN
104 VO = 5 V
Ta = 25°C
103
102
10
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
1
0.1
0.01
0.1
1 10
Output current IO (mA)
100
2 SJJ00100BED
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XN06211 transistor
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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