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Composite Transistors
XP04115 (XP4115)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q UNR1115(UN1115) × 2 elements
0.2±0.05
65
4
1 23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10°
Unit: mm
0.12+–00..0025
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
SMini6-G1 Package
Marking Symbol: 6T
Internal Connection
Tr1
1
6
25
34
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
fT
R1
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
min
–50
–50
160
–4.9
–30%
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.01 mA
460
– 0.25 V
V
– 0.2
V
80 MHz
10 +30% kΩ
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Note) The Part number in the Parenthesis shows conventional part number.
1
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Composite Transistors
PT — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XP04115
–160
–140
–120
–100
– 80
– 60
– 40
– 20
IC — VCE
IB= –1.0mA
Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200 25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
2
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