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PDF RD06HVF1 Data sheet ( Hoja de datos )
| Número de pieza | RD06HVF1 | |
| Descripción | MOS FET type transistor specifically designed for VHF RF power amplifiers applications | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
OUTLINE DRAWING
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
4
note(3)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
1 23
PINS
1:GATE
2:SOURCE
3:DRAIN
4:FIN(SOURCE)
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
note:
(1)Torelance of no designation means typical value.
Dimension in mm.
(2) :Dipping area
(3) :Copper of the ground work is exposed in case of frame separation.
marking.
www.DataSheet4U.comThis product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD06HVF1
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MITSUBISHI ELECTRIC
1/8
10 Jan 2006
www.DataSheet4U.com
1 page  
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
TEST CIRCUIT(f=175MHz)
Vgg
C1 9.1kOHM
8.2kOHM
100OHM
Vdd
L6
C3
RF-IN
300pF
L1
300pF
C2
175MHz
L5
L2 L3 L4 RD06HVF1
82pF
RF-OUT
10pF
7
5
5pF 30pF
25 70
www.Dat5a233S30 heet4U.8c792om
55
72
100
75
92
100
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire
L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire
L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD06HVF1
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MITSUBISHI ELECTRIC
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10 Jan 2006
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RD06HVF1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RD06HVF1 | MOS FET type transistor specifically designed for VHF RF power amplifiers applications | Mitsubishi Electric Semiconductor |
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