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Jiangsu Changjiang Electronics Technology |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S9013LT1 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM : 0.3
W Tamb=25
Collector current
ICM : 0.5
A
Collector-base voltage
V(BR)CBO : 40
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
otherwise specified
unless
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= 100 A IE=0
Ic= 0.1mA IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=100 A IC=0
Collector cut-off current
ICBO VCB=40 V , IE=0
Collector cut-off current
ICEO VCE=20V , IB=0
Emitter cut-off current
IEBO VEB= 5V , IC=0
DC current gain
HFE(1)
HFE(2)
VCE=1V, IC= 50m A
VCE=1V, IC=500mA
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50m A
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
VBE(sat)
fT
IC=500 mA, IB= 50m A
VCE=6V, IC= 20mA
f=30MHz
MIN
40
25
5
120
40
150
Unit : mm
TYP MAX UNIT
V
V
V
0.1 A
0.1 A
0.1 A
350
0.6 V
1.2 V
MHz
DwEVwICwE.MDAaRKtaINSGh: Se9e01t43LUT1.c=Jo3m
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SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
e1
C
Symbol
Dimensions In Millimeters
Min Max
A
0.900
1.100
A1
0.000
0.100
A2
0.900
1.000
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
1.400
E1
2.250
2.550
e 0.950TPY
e1
1.800
2.000
L 0.550REF
L1
0.300
0.500
0° 8°
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Dimensions In Inches
Min
0.035
Max
0.043
0.000
0.035
0.004
0.039
0.012
0.020
0.003
0.006
0.110
0.047
0.118
0.055
0.089
0.100
0.037TPY
0.071
0.079
0.012
0.022REF
0.020
0° 8°
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