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ON Semiconductor |
( DataSheet : www.DataSheet4U.com )
ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol BC546 BC547 BC548 Unit
Collector–Emitter Voltage
VCEO
65
45
30 Vdc
Collector–Base Voltage
VCBO
80
50
30 Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 100 µAdc)
BC546
BC547
BC548
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
BC546
BC547
BC548
BC546/547/548
ICES
Min
65
45
30
80
50
30
6.0
6.0
6.0
—
—
—
—
BC546
BC546B
BC547A
BC547B
BC547C
BC548B
BC548C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
Typ Max Unit
——
——
——
——
——
——
——
——
——
V
V
V
0.2 15 nA
0.2 15
0.2 15
— 4.0 µA
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 3
www.DataSheet4U.com
1
Publication Order Number:
BC546/D
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC547A
BC546B/547B/548B
BC548C
hFE
— 90 —
— 150 —
— 270 —
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
110 — 450
110 — 800
110 — 800
110 180 220
200 290 450
420 520 800
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
— 120 —
— 180 —
— 300 —
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
Base–Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
—
—
—
—
0.09 0.25
0.2 0.6
0.3 0.6
0.7 —
VBE(on)
0.55
—
0.7
— — 0.77
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
fT
150 300
—
150 300
—
150 300
—
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo — 1.7 4.5
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo — 10 —
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
hfe
125 — 500
125 — 900
125 220 260
240 330 500
450 600 900
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,
f = 1.0 kHz, ∆f = 200 Hz)
BC546
BC547
BC548
NF
— 2.0 10
— 2.0 10
— 2.0 10
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.
Figure 1.
Unit
—
V
V
V
MHz
pF
pF
—
dB
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