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Toshiba Semiconductor |
RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1607~RN1609
Equivalent Circuit andBias Resistor Values
Type No.
RN2607
RN2608
RN2609
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2607~RN2609
RN2607
RN2608
RN2609
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Eauivalent Circuit (Top View)
Rating
−50
−50
−6
−7
−15
−100
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-05
RN2607~RN2609
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
RN2607~RN2609
Emitter cut-off
current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation
frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2607
RN2608
RN2609
RN2607
RN2608
RN2609
RN2607~RN2609
RN2607
RN2608
RN2609
RN2607
RN2608
RN2609
RN2607~RN2609
RN2607~RN2609
RN2607
RN2608
RN2609
RN2607
RN2608
RN2609
Symbol
Test
Circuit
Test Condition
ICBO
― VCB = −50V, IE = 0
ICEO
IEBO
― VCE = −50V, IB = 0
― VEB = −6V, IC = 0
― VEB = −7V, IC = 0
― VEB = −15V, IC = 0
―
hFE ― VCE = −5V, IC = −10mA
―
VCE (sat) ― IC = −5mA, IB = −0.25mA
VI (ON)
VI (OFF)
―
― VCE = −0.2V, IC = −5mA
―
―
― VCE = −5V, IC = −0.1mA
―
fT
Cob
R1
R1/R2
― VCE = −10V, IC = −5mA
―
VCB = −10V, IE = 0
f = 1MHz
―
――
―
―
――
―
Min Typ. Max Unit
― ― −100 nA
― ― −500 nA
−0.081 ―
−0.15
−0.078 ― −0.145 mA
−0.167 ― −0.311
80 ― ―
80 ― ― ―
70 ― ―
― −0.1 −0.3 V
−0.7 ― −1.8
−1.0 ― −2.6 V
−2.2 ― −5.8
−0.5 ― −1.0
−0.6
― −1.16
V
−1.5 ― −2.6
― 200 ― MHz
―
7
15.4
32.9
0.191
0.421
1.92
3
10
22
47
0.213
0.468
2.14
6
13
28.6
61.1
0.232
0.515
2.35
pF
kΩ
―
2 2001-06-05
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