파트넘버.co.kr RN2607 데이터시트 PDF


RN2607 반도체 회로 부품 판매점

(RN2607 - RN2609) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN2607 데이터시트, 핀배열, 회로
RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1607~RN1609
Equivalent Circuit andBias Resistor Values
Type No.
RN2607
RN2608
RN2609
R1 (k)
10
22
47
R2 (k)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2607~RN2609
RN2607
RN2608
RN2609
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
2-3N1A
Eauivalent Circuit (Top View)
Rating
50
50
6
7
15
100
300
150
55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-05


RN2607 데이터시트, 핀배열, 회로
RN2607~RN2609
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
RN2607~RN2609
Emitter cut-off
current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation
frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2607
RN2608
RN2609
RN2607
RN2608
RN2609
RN2607~RN2609
RN2607
RN2608
RN2609
RN2607
RN2608
RN2609
RN2607~RN2609
RN2607~RN2609
RN2607
RN2608
RN2609
RN2607
RN2608
RN2609
Symbol
Test
Circuit
Test Condition
ICBO
VCB = 50V, IE = 0
ICEO
IEBO
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
hFE VCE = 5V, IC = 10mA
VCE (sat) IC = 5mA, IB = 0.25mA
VI (ON)
VI (OFF)
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
fT
Cob
R1
R1/R2
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0
f = 1MHz
――
――
Min Typ. Max Unit
― ― −100 nA
― ― −500 nA
0.081
0.15
0.078 ― −0.145 mA
0.167 ― −0.311
80 ― ―
80 ― ― ―
70 ― ―
― −0.1 0.3 V
0.7 ― −1.8
1.0 ― −2.6 V
2.2 ― −5.8
0.5 ― −1.0
0.6
― −1.16
V
1.5 ― −2.6
200 MHz
7
15.4
32.9
0.191
0.421
1.92
3
10
22
47
0.213
0.468
2.14
6
13
28.6
61.1
0.232
0.515
2.35
pF
k
2 2001-06-05




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: Toshiba Semiconductor

( toshiba )

RN2607 transistor

데이터시트 다운로드
:

[ RN2607.PDF ]

[ RN2607 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RN2601

(RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor



RN2602

(RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor



RN2603

(RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor



RN2604

(RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor



RN2605

(RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor



RN2606

(RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor



RN2607

(RN2607 - RN2609) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



RN2608

(RN2607 - RN2609) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



RN2609

(RN2607 - RN2609) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor