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NEC |
DATA SHEET
COMPOUND TRANSISTOR
AQ1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• High current drives such as IC and motor solenoid available up
to 2 A
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
AQ1 SERIES LISTS
Products
AQ1L2N
AQ1A3M
AQ1F3M
AQ1F3P
AQ1L2Q
AQ1F2Q
AQ1A4A
R1 (KΩ)
0.47
1.0
2.2
2.2
0.47
0.22
−
R2 (KΩ)
1.0
1.0
2.2
10
4.7
2.2
10
Electrode Connection
1. Emitter EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base IEC : PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−20
V
Collector to emitter voltage
VCEO
−20
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−2.0
A
Collector current (Pulse)
IC(pulse) *
−3.0
A
Base current (DC)
IB(DC)
−0.04
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10840EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
$4/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤ µV GXW\ F\FOH ≤
Conditions
VCB = −20 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
$4$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤ µV GXW\ F\FOH ≤
Conditions
VCB = −20 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.5 A
VCE = −5.0 V, IC = −100 µA
$4)0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤ µV GXW\ F\FOH ≤
Conditions
VCB = −20 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.3 A
VCE = −5.0 V, IC = −100 µA
AQ1 SERIES
MIN.
50
150
50
329
0.7
TYP.
MAX.
100
−0.55
−0.3
470 611
1.0 1.3
Unit
nA
−
−
−
V
V
Ω
kΩ
MIN.
50
150
50
0.7
0.7
TYP.
MAX.
−100
−0.4
−0.3
1.0 1.3
1.0 1.3
Unit
nA
−
−
−
V
V
kΩ
kΩ
MIN.
80
150
50
1.54
1.54
TYP.
MAX.
100
−0.3
−0.3
2.2 2.86
2.2 2.86
Unit
nA
−
−
−
V
V
kΩ
kΩ
'DWD 6KHHW '(-9'6
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