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PDF STU1224N Data sheet ( Hoja de datos )
| Número de pieza | STU1224N | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STU1224N (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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t4U.com S T U /D 1224NSamHop Microelectronics Corp.
Dec 20,2004
heeN-C hannel E nhancement Mode Field E ffect Trans is tor
ataSPR ODUCT S UMMAR Y
w.DV DS S
ID R DS (ON) ( m ) Max
w m80 @ VGS = 4.5V
w o24V 12A
.c130 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
UD
t4G
S
S TU S E R IE S
eT O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
heAB S OLUTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
SP a ra meter
taDrain-S ource Voltage
aGate-S ource Voltage
.DDrain Current-Continuous a @ TJ=25 C
-P ulsed b
w mDrain-S ource Diode Forward Current a
w .coMaximum Power Dissipation a
w t4UOperating Junction and S torage
eTemperature R ange
SheTHE R MAL CHAR ACTE R IS TICS
ataThermal R esistance, Junction-to-Case
.DThermal R esistance, Junction-to-Ambient
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
R JC
R JA
Limit
24
12
12
25
10
50
-55 to 150
3
50
Unit
V
V
A
A
A
W
C
C /W
C /W
www1
1 page  
S T U/D1224N
V DD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 12. S witching Waveforms
6
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
S INGLE PULS E
0.01
10-5
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R J A (t)=r (t) * R J A
2. R J A=S ee Datas heet
3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STU1224N.PDF ] | |
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