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PDF STU10NA50 Data sheet ( Hoja de datos )

Número de pieza STU10NA50
Descripción N-Channel Enhancement Mode Fast Power MOS Transistor
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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w.DataSheet4U.comTYPE
ww STU10NA50
STU10NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
500 V
RDS(on)
< 0.6
ID
10.2 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.5
s ± 30V GATE TO SOURCE VOLTAGE RATING
ms REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
os 100% AVALANCHE TESTED
.cs GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
UDESCRIPTION
The Max220TM package is a new high volume
t4power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
esupplied in bigger packages. The increased die
capacity makes the device ideal to reduce
ecomponent count in multiple paralleled TO-220
designs and save board space with respect to
hlarger packages.
SAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
tas SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
aEQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
.DABSOLUTE MAXIMUM RATINGS
wSymbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
wVDGR Drain- gate Voltage (RGS = 20 k)
123
Max220TM
INTERNAL SCHEMATIC DIAGRAM
Value
500
500
Unit
V
V
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1997
± 30
m10.2
o6.4
.c40.8
U145
et41.16
e-65 to 150
www.DataSh150
V
A
A
A
W
W/oC
oC
oC
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STU10NA50 pdf
STU10NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
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