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PDF BC32740 Data sheet ( Hoja de datos )
| Número de pieza | BC32740 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Fairchild Semiconductor | |
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BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
: BC327
: BC328
VCEO
Collector-Emitter Voltage
: BC327
: BC328
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Collector 2. Base 3. Emitter
Value
-50
-30
-45
-25
-5
-800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: BC327
: BC328
IC= -10mA, IB=0
BVCES
Collector-Emitter Breakdown Voltage
: BC327
: BC328
IC= -0.1mA, VBE=0
BVEBO
ICES
hFE1
hFE2
VCE (sat)
VBE (on)
fT
Cob
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC327
: BC328
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IE= -10µA, IC=0
VCE= -45V, VBE=0
VCE= -25V, VBE=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
IC= -500mA, IB= -50mA
VCE= -1V, IC= -300mA
VCE= -5V, IC= -10mA, f=20MHz
VCB= -10V, IE=0, f=1MHz
Min.
-45
-25
-50
-30
-5
100
40
Typ.
-2
-2
100
12
Max. Units
V
V
V
V
V
-100
-100
630
nA
nA
-0.7 V
-1.2 V
MHz
pF
hFE Classification
Classification
hFE1
hFE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC32740.PDF ] | |
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