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Advanced Semiconductor |
wwNwP.DNatSaSILheICetO4UN.coHmIGH FREQUENCY TRANSBISFTTO51RF.ADESCRIPTION:
mThe ASI BFT51F.A is Designed for
High Frequency Amplifier Applications.
PACKAGE STYLE TO- 126
.coMAXIMUM RATINGS
UIC 500 mA
t4VCE
PDISS
eTJ
eTSTG
hθJC
20 V
3.0 W @ TC = 25 OC
-65 OC to +175 OC
-65 OC to +175 OC
50 OC/W
taS NONE
aCHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
.DBVCEO
IC = 5.0 mA
BVCER
IC = 1.0 mA
RBE = 100 Ω
wBVCBO
IC = 1.0 mA
wICEO
VCE = 5.0 V
ICES VCE = 10 V
w omIEBO
VEB = 3.0 V
t4U.chFE
VCE = 5.0 V
IC = 100 mA
IC = 300 mA
eft
VCE = 5.0 V
IC = 300 mA f = 100 MHz
eCob VCB = 5.0 V
f = 1.0 MHz
MINIMUM
10
18
20
40
1.0
TYPICAL MAXIMUM
1.0
100
1.0
2.0
4.0
UNITS
V
V
V
mA
µA
mA
---
GHz
pF
w.DataShA D V A N C E D S E M I C O N D U C T O R, I N C.
ww7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
REV. A
1/1
Specifications are subject to change without notice.
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