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PDF BLY93C Data sheet ( Hoja de datos )
| Número de pieza | BLY93C | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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BLY93C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY93C is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
FEATURES:
• Common Emitter
• PG = 9.0 dB at 25 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.0 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
70 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 2.5 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
EC
Ø.125 NOM.
FULL R
J
.125
BE
C
D
FE
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 10 mA
BVEBO
IE = 10 mA
ICES VCE = 36 V
hFE VCE = 5.0 V
IC = 1.25 A
MINIMUM TYPICAL MAXIMUM
35
65
4.0
4.0
10 100
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
45
pF
GP VCE = 28 V
f = 175 MHz
9.0
--- dB
fT VCB = 28 V
IE = 200 mA
f = 100 MHz
625
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change witout notice.
REV. A
1/1
1 page | ||
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| PDF Descargar | [ Datasheet BLY93C.PDF ] | |
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