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PDF PJ13007 Data sheet ( Hoja de datos )
| Número de pieza | PJ13007 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Promax-Johnton Semiconductor | |
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PJ13007
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
• High Speed Switching
• Suitable for Swiching Regulator and Motor Control
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta= 25℃)
Characteristic
Collector Base Voltage
Collector Emitter
Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current
(Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Ic
IB
Pc
Tj
T stg
Rating
700
400
9
8
16
4
80
150
-65 ~150
Uint
V
V
V
A
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta= 25℃)
P in : 1. Base
2. Collector
3. Emitter
ORDERING INFORMATION
Device Operating Temperature
PJ13007CZ
-20℃～+85℃
Package
T O-220
Characteristic
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Symbol
VCEO(SUS)
IEBO
hFE
VCE (sat)
VBE (sat)
COB
fT
t on
ts
tf
Test Condition
Ic = 10mA, IB = 0
VEB =9V, Ic=0
VCE =5V, Ic =2A
VCE =5V, Ic =5A
Ic =2A, IB =0.4A
Ic =5A, IB =1A
Ic =8A, IB =2A
Ic =2A, IB =0.4A
Ic =5A, IB =1A
VCB =10V, f =0.1MHz
VCE =10V, Ic =0.5A
VCC =125V, Ic =5A
IB1 =IB2 =1A
Pulse Test: PW≤300 μS, Duty Cycle ≤2 %
Min Typ Max Unit
400 V
1 mA
8 60
5 30
1V
2V
3V
1.2 V
1.6 V
110 pF
4 MHz
1.6 μS
3 μS
0.7 μS
1-2 2002/01.rev.A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PJ13007.PDF ] | |
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