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Shantou Huashan Electronic Devices |
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H945
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
250mW
VCBO Collector-Base Voltage
60V
VCEO Collector-Emitter Voltage
50V
VEBO Emitter-Base Voltage
5V
IC Collector Current
150mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min
BVCBO
BVCEO
BVEBO
HFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
60
50
5
90
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
fT Current Gain-Bandwidth Product
Cob Output Capacitance
mNF Noise Figure
u.cohFE Classification
eet4R
www.datash90 180
Q
135 270
Typ Max Unit
Test Conditions
V IC=100 A, IE=0
V IC=100 A, IB=0
V IE=100 A IC=0
600 VCE=6V, IC=1mA
0.3 V IC=100mA, IB=10mA
1.0 V IC=100mA, IB=10mA
100 nA VCB=60V, IE=0
100 nA VEB=5V, IC=0
250 MHz VCE=6V, IC=10mA
3.0 pF VCB=6V, IE=0 f=1MHz
4.0
dB
VCE=6V,IC=0.5mA f=1KHz
Rs=500
P
200 400
K
300 600
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H945
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