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Korea Electronics |
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min)
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
KRC281S~KRC286S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
E SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
50
20
25
300
150
150
-55 150
UNIT
V
V
V
mA
mW
MARK SPEC
TYPE
KRC281S
KRC282S
KRC283S
KRC284S
KRC285S
KRC286S
hFE classification
B
MQB
MRB
MSB
MTB
MUB
MVB
Marking
Type Name
Lot No.
2002. 12. 5
Revision No : 1
1/2
KRC281S~KRC286S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
BVCEO
BVCBO
BVEBO
ICBO
VCE(sat)
hFE
KRC281S
KRC282S
Input Resistor
KRC283S
KRC284S
R1
KRC285S
KRC286S
Transition Frequency
fT *
Collector Output Capacitance
* Characteristic of Transistor Only.
Note) hFE Classification B:350 1200
Cob
TEST CONDITION
IC=1mA
IC=50 A
IE=50 A
VCB=50V, IE=0
IC=30mA, IB=3mA
VCE=2V, IC=4mA
VCE=6V, IC=4mA,
VCB=10V, IE=0, f=1MHz
MIN.
20
50
25
-
-
350
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
2.2
4.7
5.6
6.8
10
22
30
4.8
MAX.
-
-
-
0.1
0.1
1200
-
-
-
-
-
-
-
-
UNIT
V
V
V
A
V
k
MHz
pF
2002. 12. 5
Revision No : 1
2/2
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