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Korea Electronics |
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
E
KRC110M~KRC114M
EPITAXIAL PLANAR PNP TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
50
50
5
100
400
150
-55ᴕ150
UNIT
V
V
V
mA
mW
ᴱ
ᴱ
1998. 7. 8
Revision No : 3
1/4
KRC110M~KRC114M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC110M
ICBO
IEBO
hFE
VCE(sat)
fT *
KRC111M
Input Resistor
KRC112M
KRC113M
R1
KRC114M
KRC110M
Rise
Time
KRC111M
KRC112M
KRC113M
tr
KRC114M
KRC110M
Switching
Time
Storage
Time
KRC111M
KRC112M
KRC113M
tstg
KRC114M
KRC110M
Fall
Time
KRC111M
KRC112M
KRC113M
tf
KRC114M
Note : * Characteristic of Transistor Only.
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
VO=5V
VIN=5V
RL=1kή
MIN.
-
-
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
0.025
0.03
0.3
0.06
0.11
3.0
2.0
6.0
4.0
5.0
0.2
0.12
2.0
0.9
1.4
MAX.
100
100
-
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
kή
ỌS
1998. 7. 8
Revision No : 3
2/4
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