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Korea Electronics |
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
E
KRC110S~KRC114S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 - 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
IC
RATING UNIT
50 V
50 V
5V
100 mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23
SYMBOL
PC
Tj
Tstg
RATING
200
150
-55ᴕ150
UNIT
mW
ᴱ
ᴱ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC110S
KRC111S
Input Resistor
KRC112S
KRC113S
KRC114S
Note : * Characteristic of Transistor Only.
ICBO
IEBO
hFE
VCE(sat)
fT *
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
R1
-
-
120
-
-
-
-
-
-
-
Marking
MARK SPEC
TYPE
KRC110S
MARK
NK
KRC111S
NM
KRC112S
NN
KRC113S
NO
KRC114S
NP
Type Name
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
kή
Lot No.
2001. 6. 1
Revision No : 2
1/4
KRC110S~KRC114S
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
KRC110S
Rise
Time
KRC111S
KRC112S
KRC113S
tr
KRC114S
KRC110S
Switching
Time
Storage
Time
KRC111S
KRC112S
KRC113S
tstg
KRC114S
KRC110S
Fall
Time
KRC111S
KRC112S
KRC113S
tf
KRC114S
TEST CONDITION
VO=5V
VIN=5V
RL=1kή
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.025
0.03
0.3
0.06
0.11
3.0
2.0
6.0
4.0
5.0
0.2
0.12
2.0
0.9
1.4
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
ỌS
2001. 6. 1
Revision No : 2
2/4
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