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Toshiba Semiconductor |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5006
Equivalent Circuit
RN6006
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
VCBO
−10
Collector-emitter voltage
VCEO
−10
Emitter-base voltage
VEBO
−6
Collector current
DC
Pulse (Note1)
IC
ICP
−2
−4
Base current
IB −0.4
Collector power dissipation
PC 500
Collector power dissipation
PC *
1000
Junction temperature
Tj 150
Storage temperature range
Tstg −55~150
Note: Pulse width =< 10ms, duty cycle <= 30 %
* : Mounterd on ceramic substrate (250mm2 ´ 0.8t)
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
Marking
Unit
V
V
V
A
A
mW
mW
°C
°C
1 2001-10-29
RN6006
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-offcurrent
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Resistor
Symbol
ICBO
IEBO
V(BR)CES
hFE (1)
hFE (2)
VCE (sat)
fT
Cob
R
Test
Circuit
Test Condition
― VCB = −10V, IE = 0
― VEB = −6V, IC = 0
― IC = −1mA
― VCE = −1V, IC = −0.5A
VCE = −1V, IC = −4.0A
― IC = −2A, IB = −0.05A
― VCE = −1V, IC = −0.5A
― VCB = −10V, IE = 0, f = 1 MHz
――
Min Typ. Max Unit
― ― −0.1
−0.462 −0.60 −0.857
−10 ―
―
160 ― 600
60 ― ―
― ― −0.5
― 140 ―
― 55 ―
7 10 13
µA
mA
V
―
V
MHz
pF
kΩ
2 2001-10-29
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