파트넘버.co.kr RN6006 데이터시트 PDF


RN6006 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN6006 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5006
Equivalent Circuit
RN6006
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
VCBO
10
Collector-emitter voltage
VCEO
10
Emitter-base voltage
VEBO
6
Collector current
DC
Pulse (Note1)
IC
ICP
2
4
Base current
IB 0.4
Collector power dissipation
PC 500
Collector power dissipation
PC *
1000
Junction temperature
Tj 150
Storage temperature range
Tstg 55~150
Note: Pulse width =< 10ms, duty cycle <= 30 %
* : Mounterd on ceramic substrate (250mm2 ´ 0.8t)
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
SC-62
2-5K1A
Marking
Unit
V
V
V
A
A
mW
mW
°C
°C
1 2001-10-29


RN6006 데이터시트, 핀배열, 회로
RN6006
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-offcurrent
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Resistor
Symbol
ICBO
IEBO
V(BR)CES
hFE (1)
hFE (2)
VCE (sat)
fT
Cob
R
Test
Circuit
Test Condition
VCB = 10V, IE = 0
VEB = 6V, IC = 0
IC = 1mA
VCE = 1V, IC = 0.5A
VCE = 1V, IC = 4.0A
IC = 2A, IB = 0.05A
VCE = 1V, IC = 0.5A
VCB = 10V, IE = 0, f = 1 MHz
――
Min Typ. Max Unit
― ― −0.1
0.462 0.60 0.857
10
160 600
60 ― ―
― ― −0.5
140
55
7 10 13
µA
mA
V
V
MHz
pF
k
2 2001-10-29




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( toshiba )

RN6006 transistor

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