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PDF BCM856S Data sheet ( Hoja de datos )
| Número de pieza | BCM856S | |
| Descripción | PNP Silicon AF Transistor Array | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCM856S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PNP Silicon AF Transistor Array
• Precision matched transistor pair: ∆IC ≤ 10%
• For current mirror applications
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM846S
• BC856S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCM856S
4
5
6
3
2
1
C1 B2 E2
654
TR2
TR1
123
E1 B1 C2
EHA07175
Type
BCM856S
Marking
Pin Configuration
Package
3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Total power dissipation-
TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
ICM
Ptot
Tj
Tstg
Value
65
80
80
5
100
200
250
150
-65 ... 150
Unit
V
mA
mW
°C
1 2011-10-05
1 page  
BCM856S
Collector current IC = ƒ(VBE)
VCE = Parameter
10 -1
A
10 -2
5V 5V 5V
1V 1V 1V
10 -3
TA=100°C
TA=25°C
10 -4
TA=-50°C
10 -5
10 -6
0.2 0.3 0.4 0.5 0.6 0.7 0.8 V
1
VBE
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 4
nA
Ι CB0
10 3
5
10 2
5
10 1
5
max
EHP00381
typ
10 0
5
10 -1
0
50 100 C 150
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3
MHz
fT 5
EHP00378
10 2
5
10 1
10 -1
5 10 0
5 101
mA 10 2
ΙC
12
pF
10
9
8
7
6
5
4
3
2
1
00
CEB
CCB
4
8
12
16 V
22
VCB(VEB)
5 2011-10-05
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BCM856S.PDF ] | |
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