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ON Semiconductor |
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-563 which is designed for
low power surface mount applications.
• Lead-Free Solder Plating
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current -
Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance -
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance -
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR-4 @ Minimum Pad
RqJA
TJ, Tstg
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
- 55 to +150
Unit
mW
mW/°C
°C/W
°C
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(3) (2) (1)
Q1 Q2
(4) (5)
(6)
BC847CDXV6T1
654
12 3
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAMS
1G D
1L D
1G = BC847CDXV6T1, BC847CDXV6T5
1L = BC848CDXV6T1, BC848CDXV6T5
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BC847CDXV6T1 SOT-563
4 mm pitch
4000/Tape & Reel
BC847CDXV6T5 SOT-563
2 mm pitch
8000/Tape & Reel
BC848CDXV6T1
BC848CDXV6T5
SOT-563
4 mm pitch
4000/Tape & Reel
SOT-563
2 mm pitch
8000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CEO
V
45 -
-
30 -
-
Collector - Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CES
V
50 -
-
30 -
-
Collector - Base Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CBO
V
50 -
-
30 -
-
Emitter - Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)EBO
V
6.0 -
-
5.0 -
-
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
-
-
- 15 nA
- 5.0 µA
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
- 270 -
420 520 800
VCE(sat)
-
-
- 0.25
- 0.6
-
V
Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL- SIGNAL CHARACTERISTICS
VBE(sat)
-
-
0.7 -
0.9 -
V
VBE(on)
580
660
700
mV
- - 770
Current - Gain - Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz)
fT
Cobo
NF
100
-
-
-
-
-
- MHz
4.5 pF
dB
10
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