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BC847CDXV6T1 반도체 회로 부품 판매점

Dual General Purpose Transistors



ON Semiconductor 로고
ON Semiconductor
BC847CDXV6T1 데이터시트, 핀배열, 회로
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-563 which is designed for
low power surface mount applications.
Lead-Free Solder Plating
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current -
Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance -
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance -
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR-4 @ Minimum Pad
RqJA
TJ, Tstg
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
- 55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
BC847CDXV6T1
654
12 3
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAMS
1G D
1L D
1G = BC847CDXV6T1, BC847CDXV6T5
1L = BC848CDXV6T1, BC848CDXV6T5
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BC847CDXV6T1 SOT-563
4 mm pitch
4000/Tape & Reel
BC847CDXV6T5 SOT-563
2 mm pitch
8000/Tape & Reel
BC848CDXV6T1
BC848CDXV6T5
SOT-563
4 mm pitch
4000/Tape & Reel
SOT-563
2 mm pitch
8000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
BC847CDXV6T1/D


BC847CDXV6T1 데이터시트, 핀배열, 회로
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CEO
V
45 -
-
30 -
-
Collector - Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CES
V
50 -
-
30 -
-
Collector - Base Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CBO
V
50 -
-
30 -
-
Emitter - Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)EBO
V
6.0 -
-
5.0 -
-
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
-
-
- 15 nA
- 5.0 µA
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
- 270 -
420 520 800
VCE(sat)
-
-
- 0.25
- 0.6
-
V
Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL- SIGNAL CHARACTERISTICS
VBE(sat)
-
-
0.7 -
0.9 -
V
VBE(on)
580
660
700
mV
- - 770
Current - Gain - Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k,f = 1.0 kHz, BW = 200 Hz)
fT
Cobo
NF
100
-
-
-
-
-
- MHz
4.5 pF
dB
10
http://onsemi.com
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