파트넘버.co.kr JAN2N5416 데이터시트 PDF


JAN2N5416 반도체 회로 부품 판매점

(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR



Microsemi Corporation 로고
Microsemi Corporation
JAN2N5416 데이터시트, 핀배열, 회로
TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices
2N5415
2N5415S
2N5416
2N5416S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
@ TC = +250C
VCEO
VCBO
VEBO
IC
PT
Operating & Storage Temperature Range Top, Tstg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 4.28 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
2N5415 2N5416
200 300
200 350
6.0
1.0
0.75
10
-65 to +200
Max.
17.5
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc
VCE = 200 Vdc
2N5415
2N5415
ICEO
VCE = 250 Vdc
2N5416
VCE = 300 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Collector-Emitter Cutoff Current
2N5416
IEBO
VCE = 200 Vdc, VBE = 1.5 Vdc
2N5415
ICEX
VCE = 300 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
2N5416
VCB = 175 Vdc
2N5415
ICBO1
VCB = 280 Vdc
Collector-Base Cutoff Current
2N5416
VCB = 200 Vdc
2N5415
ICBO2
VCB = 350 Vdc
2N5416
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
TO- 5*
2N5415, 2N5416
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
Min. Max.
Unit
50 µAdc
1.0 mAdc
50 µAdc
1.0 mAdc
20 µAdc
µAdc
50 µAdc
50
50 µAdc
50
500 µAdc
500
120101
Page 1 of 2


JAN2N5416 데이터시트, 핀배열, 회로
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Voltage
IC = 50 mAdc, VCE = 10 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc
Turn-Off Time
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc
Test 4
2N5415
VCE = 300 Vdc, IC = 10 mAdc
2N5416
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Forward
Symbol
hFE
VCE(sat)
VBE
hfe
hfe
Cobo
Cibo
ton
toff
Min. Max. Unit
30 120
15
2.0 Vdc
1.5 Vdc
3.0 15
25
15
75
1.0
10
pF
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2




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JAN2N5416 transistor

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(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR - Microsemi Corporation