파트넘버.co.kr STD13003 데이터시트 PDF


STD13003 반도체 회로 부품 판매점

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR



ST Microelectronics 로고
ST Microelectronics
STD13003 데이터시트, 핀배열, 회로
® STD13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
s MEDIUM VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
1
2
3
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage
(IC = 0, IB = 0.75 A, tp < 10µs, Tj < 150oC)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. Operating Junction Temperature
September 2001
Value
700
400
BVEBO
1.5
3
0.75
1.5
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
1/8


STD13003 데이터시트, 핀배열, 회로
STD13003
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEV
Collector Cut-off
VCE = 700V
Current (VBE = -1.5V) VCE = 700V
Tj = 125oC
1 mA
5 mA
BVEBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
IE = 10 mA
IC = 10 mA
L = 25 mH
IC = 0.5 A
IC = 1 A
IC = 1.5 A
9
400
IB = 0.1 A
IB = 0.25 A
IB = 0.5 A
18 V
V
0.5 V
1V
3V
VBE(sat)Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IB = 0.1 A
IB = 0.25 A
1V
1.2 V
hFEDC Current Gain
IC = 0.5 A
Group A
Group B
IC = 1 A
VCE = 2 V
VCE = 2 V
8
15
5
20
35
25
RESISTIVE LOAD
tr Rise Time
ts Storage Time
tf Fall Time
IC = 1 A
IB1 = 0.2 A
Tp= 25 µs
VCC = 125 V
IB2 = -0.2 A
1 µs
4 µs
0.7 µs
INDUCTIVE LOAD
ts Storage Time
IC = 1 A
VBE = -5 V
Vclamp = 300 V
IB1 = 0.2 A
L = 50 mH
0.8 µs
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/8




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: ST Microelectronics

( stm )

STD13003 transistor

데이터시트 다운로드
:

[ STD13003.PDF ]

[ STD13003 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


STD13003

NPN Silicon Power Transistor - AUK



STD13003

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - ST Microelectronics



STD13003D

NPN Silicon Power Transistor - KODENSHI



STD13003L

NPN Silicon Power Transistor - AUK



STD13003Q

NPN Silicon Power Transistor - AUK



STD13005

Power Transistor - AUK Corporation



STD13005F

NPN Silicon Power Transistor - AUK



STD13005FC

NPN Silicon Power Transistor - AUK



STD13005IS

NPN Silicon Power Transistor - KODENSHI