STD13003 반도체 회로 부품 판매점
NPN Silicon Power Transistor
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 AUK |
Semiconductor
Features
• High speed switching
• VCEO(sus)=400V
• Suitable for Switching Regulator and Motor Control
Ordering Information
Type NO.
STD13003
Outline Dimensions
Marking
STD13003
STD13003
NPN Silicon Power Transistor
Package Code
MPT
unit : mm
6.5±0.2
0.70 Max.
0.4~0.6
1.2 Max.
12 3
2.5±0.1.
5.0±0.2
KST-B019-000
PIN Connections
1. Base
2. Collector
3. Emitter
1
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total Power dissipation (Ta=25℃)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Ratings
700
400
9
1.5
3
0.75
1.2
150
-55~150
STD13003
(Tc=25℃)
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter sustaining voltage VCE(sus) IC=5mA, IB=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC Current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
hFE*
VCE(sat)*
VBE(sat)*
IC=0.5A, VCE=2V
IC=1A, VCE=2V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
Transition frequency
fT VCB=10V, IC=0.1A, f=1MHz
Output capacitance
Cob VCB=10V, IE=0, f=0.1MHz
Turn on Time
ton
Storage Time
tstg
Fall Time
tf
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
VCC=125V,IC=1A
IB1=-IB2=0.2A
(Tc=25℃)
Min. Typ. Max. Unit
400 - - V
- - 10 uA
8 - 40
5-
-
- - 0.5
-- 1V
-- 3
-- 1
V
- - 1.2
4-
- MHz
- 21 - pF
- - 1.1
- - 4㎲
- - 0.7
KST-B019-000
2
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제조업체: AUK
( auk )
STD13003 transistor
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[ STD13003.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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