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PDF 2SC1030 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1030 | |
| Descripción | SILICON NPN TRASISTORS | |
| Fabricantes | ETC | |
| Logotipo |  |
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Power Transistors
2SC1030
Silicon NPN Transistors
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current-Continuous
Total Power Dissipation@TC=25
Junction temperature
Storage temperature
RATING
150
80
6
6
50
200
-55~200
UNIT
V
V
V
A
W
Electrical Characteristics Tc=25
SYMBOL
VCEO
VCER
ICEO
IEBO
ICBO
VEBO
VCE(sat-1)
VCE(sat-2)
VCE(sat-3)
hFE-1
hFE-2
hFE-3
VBE(on)
fT
hfe
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Base-emitter breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter On voltages
Current Gain-Bandwidth Product
Small-Signal Current Gain
CONDITIONS
IC=0.2A; IB=0
VCE=30V; IB=0
VEB=6V; IC=0
VCB=30V; IE=0
IC=5.0A; IB=1.0A
IC=1A; VCE=5V
IC=5A; VCE=5V
IC=1A; VCE=5V
www.jmnic.com
1B 2E 3C
TO-3
MIN TYP MAX UNIT
80 V
2.0 mA
1.0 mA
1.0 mA
1.5 V
35 200
22
10 MHz
JMnic
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC1030.PDF ] | |
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