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SPI-238-18 반도체 회로 부품 판매점

Ultraminiature photointerrupter (single-transistor type)



Sanyo Semicon Device 로고
Sanyo Semicon Device
SPI-238-18 데이터시트, 핀배열, 회로
Ordering number : EN6026
SPI-238-18
GaAs Infrared LED
SPI-238-18
Ultraminiature photointerrupter
(single-transistor type)
Features
GaAs Infrared LED plus Single Phototransistor
Photo-Interrupter
Contact type
Compact type : H4.95 ! L6.0 ! W5.5mm
Absolute Maximum Ratings at Ta=25°C, 65%RH
Parameter
Symbol
Forward Current
IF
Input LED
Reverse Voltage
Power Dissipation
VR
PD
Output
Phototransistor
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
VCEO
VECO
IC
Power Dissipation
PC
Operating Temperature
Topr
Storage Temperature
Tstg
Soldering Temperature *1
Tsol
*1 Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower stay
Rating
50
5
70
20
5
20
70
--20 to +80
--30 to +85
260
Unit
mA
V
mW
V
V
mA
mW
°C
°C
°C
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter
Symbol
Input
Output
Coupled
Forward Voltage
Reverse Current
Dark Current
Collector Output Current
Collector Emitter
Saturation Voltage
VF
IR
ICEO
IC
VCE(sat)
Rise Time
tr
Fall Time
tf
*1 Measurement Circuit of Collector Current
Condition
IF=10mA
VR=5V
IF=0mA, VCE=10V
IF=10mA,VCE=5V*1
IF=10mA, IC=20µA
VCC=5V, RL=100
IC=1mA
IF=10mA
Ic
Min.
1.0
--
--
40
--
--
--
Typ.
1.15
--
10
200
--
10
10
VCE=5V
A
Max.
1.4
10
200
400
0.5
--
--
Unit
V
µA
nA
µA
V
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6026 1/6


SPI-238-18 데이터시트, 핀배열, 회로
SPI-238-18
Typical Characteristics
CAUTION
These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Forward Current vs. Ambient Temperature
60 (Rating)
50
40
30
20
10
0
--25
0 25 50 75
Ambient Temperature Ta (°C)
100
Forward Current vs. Forward Voltage
500
Ta=75°C
50°C
100
25°C
50 0°C
--25°C
10
5
Power Dissipation vs. Ambient Temperature
120 (Rating)
100
80
60
40
20
0
--25
0 25 50 75
Ambient Temperature Ta (°C)
100
Collector vs. Forward Current
500
VCE=5V
Ta=25°C
400
300
200
100
1
0 0.5 1 1.5 2
Forward Voltage VF (V)
0
04
8 12 16 20
Forward Current IF (mA)
Collector Current vs. Collector-emitter Voltage
500
Ta=25°C
400 IF=20mA
Relative Collector Current vs. Ambient Temperature
140
IF=10mA
VCE=5V
120
300
15mA
100
200
10mA
80
100 5mA
0
0 5 10
Collector-emitter Voltage VCE (V)
60
40
--25
0 25 50 75
Ambient Temperature Ta (°C)
100
No.6026 2/6




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SPI-238-18 transistor

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Ultraminiature photointerrupter (single-transistor type) - Sanyo Semicon Device