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BC182B 반도체 회로 부품 판매점

Amplifier Transistor



ON 로고
ON
BC182B 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BC182, BC182B
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
50
60
6.0
100
350
2.8
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C PD 1.0 W
Derate above 25°C
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
357 °C/W
Thermal Resistance, Junction−to−Case
RqJC
125 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
182B
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC182G
Package
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
BC182BG
TO−92
5000 Units / Bulk
(Pb−Free)
BC182BRL1G TO−92 2000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC182/D


BC182B 데이터시트, 핀배열, 회로
BC182, BC182B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
Emitter−Base Leakage Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
50
−V
V(BR)CBO
60
−V
V(BR)EBO
6.0
−V
ICBO
− 0.2 15 nA
IEBO
− − 15 nA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC182
hFE
40 −
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
Collector −Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA) (Note 1)
Base −Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA) (Note 1)
Base−Emitter On Voltage
(IC = 100 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V) (Note 1)
DYNAMIC CHARACTERISTICS
BC182
BC182B
BC182
VCE(sat)
VBE(sat)
VBE(on)
120 − 500
180 − 500
80 −
− 0.07 0.25
− 0.2 0.6
− − 1.2
− 0.5
0.55 0.62
− 0.83
0.7
V
V
V
Current −Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Common Base Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
BC182
BC182B
fT
Cob
Cib
hfe
− 100
150 200
MHz
− − 5.0 pF
− 8.0 − pF
125 − 500
240 − 500
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
NF dB
− 2.0 10
http://onsemi.com
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