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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
*
M3D125
BC177
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
File under Discrete Semiconductors, SC04
1997 Jun 04
Philips Semiconductors
PNP general purpose transistor
Product specification
BC177
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-18; SOT18 metal package.
NPN complement: BC107.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to the case
handbook, halfpa1ge
2
3
2
MAM263
3
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V; f = 100 MHz
MIN.
−
−
−
−
125
100
MAX.
−50
−45
−200
300
500
−
UNIT
V
V
mA
mW
MHz
1997 Jun 04
2
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