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PDF BC16116 Data sheet ( Hoja de datos )
| Número de pieza | BC16116 | |
| Descripción | Amplifier Transistors PNP Silicon | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de BC16116 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC161–16/D
Amplifier Transistors
PNP Silicon
BC161-16
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
– 60
– 60
– 5.0
– 1.0
0.8
4.6
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 3.7
20
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
219
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCES = – 60 Vdc)
(IE = 0, VCES = – 60 Vdc, TAmb = 150°C)
Collector – Emitter Breakdown Voltage
(IC = – 100 µAdc, IE = 0)
Collector – Emitter Breakdown Voltage(1)
(IC = – 10 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = – 100 mAdc, IC = 0)
1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%.
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
ICES
V(BR)CES
V(BR)CEO
V(BR)EBO
32 1
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
Min Max Unit
—
—
– 60
– 60
– 5.0
– 100
– 100
—
—
—
nAdc
µAdc
Vdc
Vdc
Vdc
(Replaces BC160–16/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
– 1.0
STATIC CHARACTERISTICS
TJ = 175°C
BC161-16
VCE = –1.0 V
VCE = –10 V
25°C – 55°C
– 2.0 – 3.0
– 5.0 – 7.0 – 10
– 20 – 30 – 50 – 70 – 100
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
– 200 – 300 – 500 – 700 – 1000
– 1.0
– 0.8
– 0.6 IC = – 1.0 mA
– 10 mA
– 100 mA
TJ = 25°C
– 500 mA
– 0.4
– 0.2
0
– 0.005 – 0.007 – 0.01 – 0.02 – 0.03 – 0.05 – 0.07 – 0.1
– 0.2 – 0.3 – 0.5 – 0.7 – 1.0
IB, BASE CURRENT (mA)
– 2.0 – 3.0 – 5.0 – 7.0 – 10
Figure 16. Collector Saturation Region
– 20 – 30 – 50
– 1.0 + 1.0
– 0.8
VBE(sat) @ IC/IB = 10
– 0.6
VBE(on) @ VCE = –1.0 V
– 0.4
0
– 1.0
– 2.0
θVC for VCE(sat)
θVB for VBE
– 0.2
VCE(sat) @ IC/IB = 10
0
– 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20 – 30 – 50 – 100 – 200– 300 – 500 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
– 3.0
– 4.0
– 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20 – 30 – 50 – 100 – 200 – 300 – 500 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BC16116.PDF ] | |
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