BC140 반도체 회로 부품 판매점
NPN medium power transistors
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 Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D110
BC140; BC141
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
Philips Semiconductors
NPN medium power transistors
Product specification
BC140; BC141
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
handbook, halfpag1e
2
3
2
MAM317
3
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BC140
BC141
VCEO
collector-emitter voltage
BC140
BC141
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
fT transition frequency
CONDITIONS
MIN.
open emitter
−
−
open base
Tcase ≤ 45 °C
IC = 100 mA; VCE = 1 V
−
−
−
−
63
100
IC = 50 mA; VCE = 10 V; f = 100 MHz 50
TYP.
−
−
−
−
−
−
100
160
−
MAX. UNIT
80 V
100 V
40 V
60 V
1.5 A
3.7 W
160
250
− MHz
1997 May 12
2
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BC140 transistor
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