|
Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BC107; BC108; BC109
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to the case
handbook, halfpa1ge
2
3
2
MAM264
3
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BC107
BC108; BC109
VCEO
collector-emitter voltage
BC107
BC108; BC109
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
BC107
BC108
BC109
fT transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN. MAX. UNIT
− 50 V
− 30 V
− 45 V
− 20 V
− 200 mA
− 300 mW
110 450
110 800
200 800
100 −
MHz
1997 Sep 03
2
|