SO2907 반도체 회로 부품 판매점
SMALL SIGNAL PNP TRANSISTORS
|
|
 ST Microelectronics |
SO2907
SO2907A
SMALL SIGNAL PNP TRANSISTORS
Type
SO2907
SO 2907A
Marking
P05
P03
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
s NPN COMPLEMENTS ARE RESPECTIVELY
SO2907 AND SO2907A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
V CBO
V CEO
V EBO
ICM
Ptot
Tstg
Tj
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Peak Current
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. O perating Junction Temperature
March 1996
Value
SO2907
SO 2907A
-60 -60
-40 -60
-5
-0.8
350
-65 to 150
150
Uni t
V
V
V
A
mW
oC
oC
1/4
SO2907/SO2907A
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
Max
Max
350
290
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEX Collect or Cut-off
Cu r re nt
VCE = -30 V VBE = -3 V
IBEX Base Cut-off Current VCE = -30 V VBE = -3 V
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
for SO2907
for SO2907A
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
for SO2907
for SO2907A
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = -10 µA
IE = -10 µA
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
VBE(s at)∗
hFE∗
Co lle ct or- Bas e
Saturation Voltage
DC Current G ain
IC = -150 mA
IC = -500 mA
IC = -0.1 mA
for SO2907
for SO2907A
IC = -1 mA
for SO2907
for SO2907A
IC = -10 mA
for SO2907
for SO2907A
IC = -150 mA
IB = -15 mA
IB = -50 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT Transit ion F requency IC = -50 mA VCE = -20V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz
CEB Emitt er Base
Capacitance
IC = 0 VEB = -2 V f = 1 MHz
td Delay Time
IC = -150 mA IB1 = -15 mA
tr Rise Time
ton Switching On Time
ts Storage Time
IC = -150 mA IB1 = -IB2 = -15mA
tf Fall Time
toff Switching Of f Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
-40
-60
-60
-5
35
75
50
100
75
100
100
200
Typ .
M a x.
-50
-50
-20
-10
-0.4
-1.6
-1.3
-2.6
300
8
30
10
40
45
80
30
100
Unit
nA
nA
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
2/4
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: ST Microelectronics
( stm )
SO2907 transistor
데이터시트 다운로드 :
[ SO2907.PDF ]
[ SO2907 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SO2907
SMALL SIGNAL PNP TRANSISTORS - ST Microelectronics
SO2907A
SMALL SIGNAL PNP TRANSISTORS - ST Microelectronics