SO2222 반도체 회로 부품 판매점
SMALL SIGNAL NPN TRANSISTORS
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 ST Microelectronics |
SO2222
SO2222A
SMALL SIGNAL NPN TRANSISTORS
Type
SO2222
SO 2222A
Marking
N13
N20
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
s PNP COMPLEMENTS ARE RESPECTIVELY
SO2907 AND SO2907A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
V CBO
V CEO
V EBO
ICM
Ptot
Tstg
Tj
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Peak Current
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. O perating Junction Temperature
March 1996
Value
SO2222
SO 2222A
60 75
30 40
56
0.8
350
-65 to 150
150
Uni t
V
V
V
A
mW
oC
oC
1/5
SO2222/SO2222A
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm
Max
Max
350
290
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEX
IBEX
ICBO
Collector Cut-off
Current (VBE = 0)
Base Cut-off Current
(VBE = 0)
Collector Cut-off
Current (IE = 0)
VCE = 60 V VBE = -3 V
for SO2222A
VCE = 60 V VBE = -3 V
for SO2222A
VCB = rated VCBO
VCB = rated VCBO Tj = 150 oC
IEBO
Emitt er Cut-off Current VEB = 3 V
(IC = 0)
for SO2222
for SO2222A
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IB = 0)
IC = 10 mA
for SO2222
for SO2222A
IC = 10 µA
for SO2222
for SO2222A
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
IE = 10 µA
for SO2222
for SO2222A
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 150 mA
for SO2222
for SO2222A
IC = 500 mA
for SO2222
for SO2222A
IB = 15 mA
IB = 50 mA
VBE(s at)∗ Collect or-Base
Saturation Voltage
IC = 150 mA
for SO2222
for SO2222A
IC = 500 mA
for SO2222
for SO2222A
IB = 15 mA
IB = 50 mA
hFE∗ DC Current G ain
IC = 0.1 mA VCE = 10 V
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 150 mA VCE = 1 V
IC = 500 mA VCE = 10 V
for SO2222
for SO2222A
fT Transit ion F requency IC = 20 mA VCE = 20V f = 100MHz
for SO2222
for SO2222A
CCB Collect or Base
IE = 0
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
VCB = 10 V f = 1 MHz
Min. Typ.
30
40
60
75
5
6
0.6
35
50
75
100
50
30
40
250
300
M a x.
10
20
10
10
30
15
0.4
0.3
1.6
1
1.3
1.2
2.6
2
300
8
Unit
nA
nA
nA
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
MHz
pF
2/5
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( stm )
SO2222 transistor
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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관련 데이터시트
SO2222
SMALL SIGNAL NPN TRANSISTORS - ST Microelectronics
SO2222A
SMALL SIGNAL NPN TRANSISTORS - ST Microelectronics