NZT751 반도체 회로 부품 판매점

PNP Current Driver Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
NZT751 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
NZT751
C
SOT-223
E
C
B
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
80
5.0
4.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
*NZ T751
PD Total Device Dissipation
Derate above 25°C
1.2
9.7
RθJA Thermal Resistance, Junction to Ambient
103
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation

NZT751 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
PNP Current Driver Transistor
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 80 V, IE = 0
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
IC = 1.0 A, IB = 100 mA
IC = 2.0 A, IB = 200 mA
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 2.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
60 V
80 V
5.0 V
100 nA
0.1 µA
75
75
75
40
0.3
0.5
1.2
1.0
V
V
V
V
75 MHz
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
140 VCE = 5V
120
100 125 °C
80
60 25 °C
40 - 40 °C
20
0
0.01
0.1 1
I C - COLLECTOR CURRENT (A)
10
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β = 10
0.5
0.4
125 °C
0.3
0.2 25 °C
0.1 - 40 ºC
0
0.1 1
I C - COLLECTOR CURRENT (A)
PP
5




PDF 파일 내의 페이지 : 총 3 페이지

제조업체 : Fairchild Semiconductor ( fairchild )

NZT751 transistor

데이터시트 다운로드
:

[ NZT751.PDF ]

[ NZT751 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743


일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


추천 데이터시트


NZT751

PNP Current Driver Transistor - Fairchild Semiconductor