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NZT651 반도체 회로 부품 판매점

NPN Current Driver Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
NZT651 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
NZT651
C
SOT-223
E
C
B
NPN Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
80
5.0
4.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
*NZ T651
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
1.2
9.7
103
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation


NZT651 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
NPN Current Driver Transistor
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 80 V, IE = 0
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
IC = 1.0 A, IB = 100 mA
IC = 2.0 A, IB = 200 mA
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 2.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
60 V
80 V
5.0 V
100 nA
0.1 µA
75
75
75
40
0.3
0.5
1.2
1.0
V
V
V
V
75 MHz
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
V CE= 5V
125 °C
150
100
50
0
0.01
25 °C
- 40 ºC
0.1 1
I C - COLLECTOR CURRENT (A)
10
Collector-Emitter Saturation
Voltage vs Collector Current
3
β = 10
2.5
2
1.5
1 25 °C
0.5
0
0.01
- 40 ºC
125 °C
0.1 1
I C - COLLECTOR CURRENT (A)
P 4P
10




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NZT651 transistor

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NPN Current Driver Transistor - Fairchild Semiconductor