NZT560A 반도체 회로 부품 판매점

NPN Low Saturation Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
NZT560A 데이터시트, 핀배열, 회로
July 1998
NZT560 / NZT560A
C
E
C
B
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
NZT560/NZT560A
VCEO
Collector-Emitter Voltage
60
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
80
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
3
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
NZT560/NZT560A
2
62.5
Units
W
°C/W
© 1998 Fairchild Semiconductor Corporation
nzt560.lwpPrNA 7/10/98 revC

NZT560A 데이터시트, 핀배열, 회로
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, TA=100°C
VEB = 4V
60 V
80 V
5V
100 nA
10 uA
100 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100 mA, VCE = 2 V
70
IC = 500 mA, VCE = 2 V NZT560
100 300
NZT560A 250 550
IC = 1 A, VCE = 2 V
80
IC = 3 A, VCE = 2 V
25
-
IC = 1 A, IB = 100 mA
IC = 3 A, IB = 300 mA
NZT560
NZT560A
300 mV
450
400
IC = 1 A, IB = 100 mA
1.25 V
IC = 1 A, VCE = 2 V
1V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
fT Transition Frequency
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, IE = 0, f = 1MHz
30 pF
IC = 100 mA,VCE = 5 V, f=100MHz 75
-
© 1998 Fairchild Semiconductor Corporation
Nzt560.lwpPrNA 7/10/98 revC




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NZT560A transistor

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