|
|
PDF NE02133-T1B Data sheet ( Hoja de datos )
| Número de pieza | NE02133-T1B | |
| Descripción | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | ETC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NE02133-T1B (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
b e r sNEC's NE021 series of NPN silicon transistors provides eco-
P L E A S E N O T E : p a r t n u mnomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
T h e f o l l o wdi nagt a s h e e t a r eintermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
f r o m t h i s o t i v e :tions.
n o n p rNoEm0 2 1 0 0NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
N E 0 2 1 3 3 b e r sFREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
N E 0 2 1 3 9 p a r t n u mVCE = 10 V, IC = 5 mA
T h e f o l l o wdi nagt a s h e e t a r e500 1.2 18.60 .36 69 .14
1000
1.5 13.82 .31 124 .12
1500
2.0 11.83 .50 165 .05
2000
2.4
9.36 .44
-175
.06
2500
2.6
7.82 .52
-161
.10
t h i s3000
3.6
7.51 .68
-141
.14
fdr oi smc o n t i n u e d :3500
3.7
6.31 .71
-139
.21
VCE = 10 V, IC = 20 mA
N E 0 2 1 0 7 f o r500 1.8 21.32 .16 149 .15
N E 0 2 1 3 5 office1000
1.9 16.15 .33 169 .13
1500
2.4 13.50 .46
-179
.09
c a l l s a l e s2000
2.9 11.02 .53
-167
.08
2500
3.2
9.12 .57
-154
.14
3000
3.9
8.10 .62
-139
.27
dPelet aasi les .3500
4.3
6.48 .67
-134
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
California Eastern Laboratories
1 page  
TYPICAL COMMON EMITTER SCATTERING PARAMETERS1 (TA = 25°C)
NE021 SERIES
j50
j25 j100
j10
S11
5 GHz
0 10
25 50 100
S22 S22
5 GHz
0.1 GHz
-j10
S11
0.1 GHz
-j25 -j100
-j50
0
Coordinates in Ohms
Frequency in GHz
(VCE = 10 V, IC = 20 mA)
90˚
S21 120˚
0.1 GHz
60˚
150˚
S21
5 GHz
S12
5 GHz
180˚ 0.5 0.4 0.3 0.2 0.1 S12
0.1 GHz
-150˚
-120˚
10
15
20
S21 25
-90˚
-60˚
30˚
0˚
-30˚
NE02100
VCE = 10 V, IC = 5 mA
FREQUENCY
S11
S21 S12
S22 K MAG2
(MHz)
MAG ANG
MAG ANG
MAG
ANG
MAG ANG
(dB)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.84 -32
.75 -114
.73 -150
.71 -164
.71 -173
.71 -179
.70 176
.70 172
.70 168
.70 165
.70 161
11.83
7.22
4.13
2.85
2.16
1.75
1.49
1.28
1.13
1.02
.92
160
113
89
76
66
57
49
42
34
27
20
.03 70
.07 36
.09 27
.09 27
.10 28
.10 30
.11 32
.12 33
.12 34
.13 34
.14 35
.94 -16
.56 -45
.39 -51
.36 -56
.33 -61
.33 -67
.34 -73
.35 -80
.37 -88
.39 -94
.41 -100
.11
.29
.54
.77
.97
1.14
1.25
1.35
1.41
1.47
1.49
26.4
19.9
16.9
15.0
13.5
10.1
8.3
6.9
5.9
4.9
4.2
VCE = 10 V, IC = 10 mA
100 .75 -47
500 .72 -137
1000
.72 -162
1500
.71 -173
2000
.71 -179
2500
.71 176
3000
.71 172
3500
.71 168
4000
.70 165
4500
.70 162
5000
.70 159
20.04
9.40
4.97
3.37
2.56
2.05
1.74
1.50
1.33
1.19
1.08
153
105
86
75
66
58
51
44
37
30
24
.02 65
.05 34
.06 34
.07 38
.08 41
.09 43
.10 44
.11 44
.12 44
.13 44
.14 43
.89 -24
.41 -57
.27 -62
.23 -66
.22 -71
.23 -76
.24 -82
.25 -88
.27 -95
.29 -100
.31 -106
.11
.39
.69
.92
1.09
1.19
1.27
1.31
1.36
1.39
1.39
29.2
22.5
19.0
16.8
13.2
10.9
9.2
7.9
6.8
5.9
5.1
VCE = 10 V, IC = 20 mA
100 .68 -70
500 .72 -152
1000
.72 -170
1500
.72 -178
2000
.72 177
2500
.72 172
3000
.71 169
3500
.71 166
4000
.71 162
4500
.71 160
5000
.71 157
29.75
10.58
5.42
3.65
2.74
2.21
1.86
1.61
1.42
1.28
1.15
145
99
84
74
66
58
51
44
38
31
25
.02 59
.04 37
.05 43
.06 48
.07 50
.09 51
.10 52
.11 51
.12 51
.13 49
.14 48
.81 -33
.30 -65
.19 -69
.17 -73
.17 -78
.17 -83
.19 -87
.20 -93
.22 -99
.24 -105
.27 -109
.14
.53
.87
1.05
1.17
1.23
1.27
1.30
1.34
1.33
1.34
31.6
24.3
20.4
16.4
13.2
11.3
9.7
8.4
7.3
6.4
5.6
Notes:
1. S-Parameters include bond wires.
BASE:Total 1 wire (s), 1 per bond pad, 0.0115 (291 µm) long each wire. EMITTER: Total 2 wire (s), 1 per side, 0.015" (393 µm) long each wire.
COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.0072" (182 µm)
WIRE: 0.0007' (17.7 µm) dia., gold.
long each wire.
2. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
5 Page 
OUTLINE DIMENSIONS (Units in mm)
NE02100 (CHIP)
0.35±0.01
0.30
0.29
0.23
0.052
BASE
EMITTER
0.07φ
0.35±0.01
0.094
0.106
PACKAGE OUTLINE 33
+0.2
2.8 -0.3
2.9 ± 0.2 0.95
1.9
2
3
1
+0.2
1.5 -0.1
1.1 to 1.4
0.8
0 to 0.1
+0.10
0.4 -0.05
(ALL LEADS)
+0.10
0.65 -0.15
LEAD
CONNECTIONS
1. Emitter
2. Base
3. Collector
+0.10
0.16 -0.06
NE021 SERIES
PACKAGE OUTLINE 07
MARKING
E
5.0 MIN (ALL LEADS)
CB
0.5±0.07
INTERNAL
CODE
45˚
MONTH INDICATOR
YEAR INDICATOR
E
1.0±0.1
0.1+-00..0063
2.5
+0.4
-0.2
1.3+-00..42
*07B has emitter and base reversed..
PACKAGE OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
2.4
2
0.8
1
1.0
3
1.9
0.95
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NE02133-T1B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NE02133-T1B | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ETC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |