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NE02107B 반도체 회로 부품 판매점

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR



ETC 로고
ETC
NE02107B 데이터시트, 핀배열, 회로
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
LOW NOISE FIGURE: 1.5 dB at 500 MHz
HIGH POWER GAIN: 12 dB at 2 GHz
LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
b e r sNEC's NE021 series of NPN silicon transistors provides eco-
P L E A S E N O T E : p a r t n u mnomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
T h e f o l l o wdi nagt a s h e e t a r eintermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
f r o m t h i s o t i v e :tions.
n o n p rNoEm0 2 1 0 0NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
N E 0 2 1 3 3 b e r sFREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
N E 0 2 1 3 9 p a r t n u mVCE = 10 V, IC = 5 mA
T h e f o l l o wdi nagt a s h e e t a r e500 1.2 18.60 .36 69 .14
1000
1.5 13.82 .31 124 .12
1500
2.0 11.83 .50 165 .05
2000
2.4
9.36 .44
-175
.06
2500
2.6
7.82 .52
-161
.10
t h i s3000
3.6
7.51 .68
-141
.14
fdr oi smc o n t i n u e d :3500
3.7
6.31 .71
-139
.21
VCE = 10 V, IC = 20 mA
N E 0 2 1 0 7 f o r500 1.8 21.32 .16 149 .15
N E 0 2 1 3 5 office1000
1.9 16.15 .33 169 .13
1500
2.4 13.50 .46
-179
.09
c a l l s a l e s2000
2.9 11.02 .53
-167
.08
2500
3.2
9.12 .57
-154
.14
3000
3.9
8.10 .62
-139
.27
dPelet aasi les .3500
4.3
6.48 .67
-134
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
California Eastern Laboratories


NE02107B 데이터시트, 핀배열, 회로
NE021 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE02100
00 (CHIP)
UNITS MIN TYP MAX
fT
|S21|2
NFMIN
ICBO
IEBO
hFE
CCB
RTH (J-C)
RTH (J-A)
PT5
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
GHz
Insertion Power Gain at VCE = 10 V, IC = 20 mA,
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
dB
dB
dB
Minimum Noise Figure2 at
VCE = 10 V, IC = 3 mA, f = 0.5 GHz
VCE = 10 V, IC = 5 mA, f = 2 GHz
dB
dB
Collector Cutoff Current at VCB = 15 V, IE = 0
µA
Emitter Cutoff Current at VEB = 2 V, IC = 0
µA
Forward Current Gain at VCE = 10 V, IC = 20 mA
Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz pF
Thermal Resistance (Junction to Case)
°C/W
Thermal Resistance (Junction to Ambient)
°C/W
Total Power Dissipation
mW
5.5
20
580
4.5
18.5
13
6.5
1.5
2.7 4.5
1.0
1.0
70 250
0.6 1.0
70
700
NE02107
07/07B3
MIN TYP MAX
4.5
18.5
13
5.5 6.5
1.5
2.7 4.5
1.0
1.0
20 70 250
0.6 1.0
90
500
350 700
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
|S21E|2
NFMIN
ICBO
IEBO
hFE
CCB
RTH (J-C)
RTH (J-A)
PT5
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at VCE = 10 V,
IC = 20 mA
Insertion Power Gain at
VCE = 10 V, IC = 20 mA,
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
Minimum Noise Figure6 at
VCE = 10 V, IC = 3 mA,
f = 0.5 GHz
VCE = 10 V, IC = 5 mA,
f = 1 GHz
f = 2 GHz
Collector Cutoff Current at VCB = 15 V,
IE = 0
Emitter Cutoff Current at VEB = 2 V,
IC = 0
Forward Current Gain at
VCE = 10 V, IC = 20 mA
Collector to Base Capacitance4 at
VCB = 10 V, IE = 0 , f = 1 MHz
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
UNITS
NE02133
2SC2351
33
MIN TYP MAX
NE02135
2SC2149
35
MIN TYP MAX
NE02139
2SC4092
39
MIN TYP MAX
GHz
4.5
4.5
4.5
dB 15
dB 9 10
dB 4 5
18.5
13
5 5.7
9 10
dB
dB
dB
µA
µA
pF
°C/W
°C/W
mW
1.5 3
1.5
2.7 4.0
1.5
1.0 1.0 1.0
1.0 1.0 1.0
40 70 200 20 70 250 40 70 200
0.75 1.0
0.6 1.0
120
666 600
150 290
500
.75
500
200
Notes:
1. Electronic Industrial Association of Japan.
3. Common base electrical charactristics see S-Parameters.
5. Minimum dissipations based on RTH (J-A) for applications without effective
heat sink, maximum dissipations based on RTH (J-C) for applications with
effective heat sink.
2. Input and output are tuned for optimum noise figures.
4. CCB measurement employs a three-terminal capacitance bridge
incorporating a guard circuit. The emitter terminal shall be
connected to the guard terminal.
6. Output and Input are tuned for minimum noise figure.




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