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MZ0912B50Y 반도체 회로 부품 판매점

NPN microwave power transistor



Philips 로고
Philips
MZ0912B50Y 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0912B50Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18


MZ0912B50Y 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN microwave power transistor
Product specification
MZ0912B50Y
FEATURES
Interdigitated structure provides
high emitter efficiency
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Gold metallization realizes very
stable characteristics and excellent
lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Input and output matching cell
allows an easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
broadband amplifier.
MODE OF
OPERATION
f
(GHz)
VCC PL Gp ηC
(V) (W) (dB) (%)
Zi/ZL ()
Class C;
0.960 to 1.215 50
tp = 10 µs; δ = 1%
>50 >7
>42 see Figs 6
and 7
PINNING - SOT443A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
handbook, halfpage
1
c
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
2
Top view
b
3
e
MAM314
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2




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