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Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0912B50Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
NPN microwave power transistor
Product specification
MZ0912B50Y
FEATURES
• Interdigitated structure provides
high emitter efficiency
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Input and output matching cell
allows an easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
broadband amplifier.
MODE OF
OPERATION
f
(GHz)
VCC PL Gp ηC
(V) (W) (dB) (%)
Zi/ZL (Ω)
Class C;
0.960 to 1.215 50
tp = 10 µs; δ = 1%
>50 >7
>42 see Figs 6
and 7
PINNING - SOT443A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
handbook, halfpage
1
c
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
2
Top view
b
3
e
MAM314
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
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