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PN2907A-AP 반도체 회로 부품 판매점

SMALL SIGNAL PNP TRANSISTOR



ST Microelectronics 로고
ST Microelectronics
PN2907A-AP 데이터시트, 핀배열, 회로
® PN2907A
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
PN2907A
PN2907A TO-92 / Bulk
PN2907A-AP PN2907A TO-92 / Ammopack
s SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
s TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
s THE NPN COMPLEMENTARY TYPE IS
PN2222A
APPLICATIONS
s WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
s SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
TO-92
Bulk
TO-92
Ammopack
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Total Dissipation at Tamb = 25 oC
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
-60
-60
-5
-0.6
-0.8
500
-65 to 150
150
Unit
V
V
V
A
A
mW
oC
oC
1/5


PN2907A-AP 데이터시트, 핀배열, 회로
PN2907A
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Rthj-case Thermal Resistance Junction-Case
Max
Max
250
83.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX Collector Cut-off
Current (VBE = -3 V)
IBEX Base Cut-off Current
(VBE = -3 V)
ICBO
Collector Cut-off
Current (IE = 0)
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VCE = -30 V
VCE = -30 V
VCB = -50 V
IC = -10 mA
IC = -10 µA
IE = -10 µA
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
VBE(sat)Collector-Base
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
hFEDC Current Gain
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
IC = -150 mA
IC = -500 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT Transition Frequency IC = -50 mA VCE = -20V f = 100MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = -2 V f = 1 MHz
td Delay Time
tr Rise Time
IC = -150 mA IB = -15 mA
VCC = -30V
ton Switching On Time
ts Storage Time
tf Fall Time
IC = -150 mA IB1 = -IB2 = -15mA
VCC = -30V
toff Switching Off Time
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min.
-60
-60
-5
75
100
100
100
50
200
Typ.
190
220
Max.
-50
-50
-10
-0.4
-1.6
-1.3
-2.6
300
8
30
10
40
45
30
Unit
nA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
2/5




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PN2907A-AP transistor

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