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ROHM Semiconductor |
Transistors
UMT2907A / SST2907A / MMST2907A / PN2907A
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A
!Features
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A / PN2222A.
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2907A SST2907A MMST2907A PN2907A
UMT3
SST3
SMT3
TO-92
R2F
R2F
R2F
-
T106
T116
T146
T93
3000
3000
3000
3000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
UMT2907A,
SST2907A,
MMST2907A
PN2907A
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
-60
-60
-5
-0.6
0.2
0.625
150
-55~+150
Unit
V
V
V
A
W
˚C
˚C
!External dimensions (Units : mm)
UMT2907A
ROHM : UMT3
EIAJ : SC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
(3)
0.3+−00.1
All terminals have
same dimensions
0.9±0.1
0.2 0.7±0.1
0~0.1
0.15±0.05
(1) Emitter
(2) Base
(3) Collector
SST2907A
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1) (2)
0~0.1
0.2Min.
(3)
All terminals have
same dimensions
0.4+−00..015
0.15−+00..016
(1) Emitter
(2) Base
(3) Collector
MMST2907A
ROHM : SMT3
EIAJ : SC-59
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1+−00..12
0.8±0.1
0~0.1
(3)
All terminals have
same dimensions
0.4+−00..015
0.15−+00..016
(1) Emitter
(2) Base
(3) Collector
PN2907A
4.8±0.2
3.7±0.2
ROHM : TO-92
EIAJ : SC-43
0.5±0.1
(1)
(2)
(3)
2.5
+0.3
−0.1
5
0.45±0.1
2.3
(1) Emitter
(2) Base
(3) Collector
Transistors
UMT2907A / SST2907A / MMST2907A / PN2907A
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
hFE
fT
Cob
Cib
ton
td
tr
toff
tstg
tf
Min.
−60
−60
−5
−
−
−
−
−
0.6
−
75
100
100
100
50
200
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−100
−100
−100
−0.4
−1.6
−1.3
−2.6
−
−
−
300
−
−
8
30
50
10
40
100
80
30
Unit
V
V
V
nA
nA
V
V
−
MHz
pF
pF
ns
ns
ns
ns
ns
ns
Conditions
IC=10µA
IC=10mA
IE=10µA
VCB=−50V
VCB=−30V
VEB=−3V
IC/IB=−150mA/−15mA
IC/IB=−500mA/−50mA
IC/IB=−150mA/−15mA
IC/IB=−500mA/−50mA
VCE=−10V, IC=−0.1mA
VCE=−10V, IC=−1mA
VCE=−10V, IC=−10mA
VCE=−10V, IC=−150mA
VCE=−10V, IC=−500mA
VCE=−20V, IC=−50mA, f=100MHz
VCB=−10V, f=100kHz
VEB=−2V, f=100kHz
VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
VCC=−30V, IC=−150mA, IB1=IB2=−15mA
VCC=−30V , IC=−150mA, IB1=IB2=−15mA
VCC=−30V, IC=−150mA, IB1=IB2=−15mA
!Electrical characteristic curves
100
Ta=25˚C
600
500
400
50 300
200
100
1B=0µA
0
05
10
COLLECTOR-EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
1000
100
1.8
Ta=25˚C
1.6 IC / IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Base-emitter saturation
voltage vs. collector current
Ta=25˚C
VCE=10V
1V
10
0.1
1.0 10 100
COLLECTOR CURRENT : IC (mA)
1000
Fig.3 DC current gain vs. collector current ( I )
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